JPH044755B2 - - Google Patents

Info

Publication number
JPH044755B2
JPH044755B2 JP57048569A JP4856982A JPH044755B2 JP H044755 B2 JPH044755 B2 JP H044755B2 JP 57048569 A JP57048569 A JP 57048569A JP 4856982 A JP4856982 A JP 4856982A JP H044755 B2 JPH044755 B2 JP H044755B2
Authority
JP
Japan
Prior art keywords
potential
input
well region
power supply
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57048569A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58165369A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57048569A priority Critical patent/JPS58165369A/ja
Publication of JPS58165369A publication Critical patent/JPS58165369A/ja
Publication of JPH044755B2 publication Critical patent/JPH044755B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57048569A 1982-03-26 1982-03-26 入力保護回路 Granted JPS58165369A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57048569A JPS58165369A (ja) 1982-03-26 1982-03-26 入力保護回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57048569A JPS58165369A (ja) 1982-03-26 1982-03-26 入力保護回路

Publications (2)

Publication Number Publication Date
JPS58165369A JPS58165369A (ja) 1983-09-30
JPH044755B2 true JPH044755B2 (en]) 1992-01-29

Family

ID=12807023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57048569A Granted JPS58165369A (ja) 1982-03-26 1982-03-26 入力保護回路

Country Status (1)

Country Link
JP (1) JPS58165369A (en])

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4829350A (en) * 1988-05-05 1989-05-09 National Semiconductor Corporation Electrostatic discharge integrated circuit protection
JPH0415955A (ja) * 1990-05-09 1992-01-21 Mitsubishi Electric Corp 半導体装置の入力回路の製造方法
FR2723800B1 (fr) * 1994-08-19 1997-01-03 Thomson Csf Semiconducteurs Circuit de protection contre les decharges electrostatiques
KR100190008B1 (ko) * 1995-12-30 1999-06-01 윤종용 반도체 장치의 정전하 보호 장치
US5808343A (en) * 1996-09-20 1998-09-15 Integrated Device Technology, Inc. Input structure for digital integrated circuits
JP2959528B2 (ja) * 1997-06-09 1999-10-06 日本電気株式会社 保護回路
JP3703293B2 (ja) * 1998-03-26 2005-10-05 シャープ株式会社 Ｃｃｄ固体撮像素子

Also Published As

Publication number Publication date
JPS58165369A (ja) 1983-09-30

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